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APTGF90A60TG データシート PDF

この部品の機能は「Phase Leg Npt Igbt Power Module」です。


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部品番号
APTGF90A60TG

Phase leg NPT IGBT Power Module


APTGF90A60TG Phase leg NPT IGBT Power Module VBUS Q1 G1 NTC2 www.Datasheet.jp VCES = 600V IC = 90A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterrupt


Microsemi Corporation
Microsemi Corporation

データシート pdf



文字列「 APTGF90A60 」「 90A60TG 」で始まる検索結果です。

部品説明

APTGF90A60T

Phase leg NPT IGBT Power Module

APTGF90A60T Phase leg NPT IGBT Power Module VBUS NTC2 VCES = 600V IC = 90A @ Tc = 80°C Application · Welding converters · Switched Mode Power Supplies · Uninterruptible Power Supplies · Motor control Features · Non Punch Through (NPT) THUNDERBOLT IGBT

Advanced Power Technology
Advanced Power Technology

 データシート pdf


2SB139060ML

SCHOTTKY BARRIER DIODE CHIPS

2SB139060ML 2SB139060ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø Ø Ø Ø Ø Ø 2SB139060ML is a schottky barrier diode chips Lb Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High surge capability; Packaged products

Silan Microelectronics
Silan Microelectronics

 データシート pdf


AAT9060

30V N-Channel Power MOSFET

30V N-Channel Power MOSFET General Description The AAT9060 30V N-Channel Power MOSFET is a member of AnalogicTech™'s TrenchDMOS™ product family. Using the ultra-high density proprietary TrenchDMOS technology, this product demonstrates high power handling and small size. AAT9

Advanced Analogic Technologies
Advanced Analogic Technologies

 データシート pdf


AD9060

10-Bit 75 MSPS A/D Converter

a 10-Bit 75 MSPS A/D Converter AD9060 FEATURES Monolithic 10-Bit/75 MSPS Converter ECL Outputs Bipolar (؎1.75 V) Analog Input 57 dB SNR @ 2.3 MHz Input Low (45 pF) Input Capacitance APPLICATIONS Digital Oscilloscopes Medical Imaging Professional Video Radar Warning/Guidance S

Analog Devices
Analog Devices

 データシート pdf


AGR19060E

Transistor

AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz— 1990

TriQuint Semiconductor
TriQuint Semiconductor

 データシート pdf


AP9060

OVERVOLTAGE CLAMP

AP9060 OVERVOLTAGE CLAMP Description AP9060 is designed to protect the latest generation of PMICs for portable applications such as Smartphones, UMPCs and others that utilize battery power. Pin Assignments W-DFN1114-3 1 The device, with its integrated low resistance p-channel

Diodes Incorporated
Diodes Incorporated

 データシート pdf

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