APTGF180H60 データシート PDFこの部品の機能は「Full - Bridge Npt Igbt Power Module」です。 |
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部品番号 |
APTGF180H60 Full - Bridge NPT IGBT Power Module APTGF180H60 Full - bridge NPT IGBT Power Module VCES = 600V IC = 180A @ Tc = 80°C Application · Welding converters · Switched Mode Power Supplies · Uninterruptible Power Supplies · Motor control Advanced Power Technology |
文字列「 APTGF180H60 」「 180H60 」で始まる検索結果です。 |
部品説明 |
APTGF180H60G APTGF180H60G NPT IGBT Power Module APTGF180H60G Full - bridge NPT IGBT Power Module VBUS Q1 G1 Q3 G3 VCES = 600V IC = 180A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Non Punch Through (NPT) Microsemi Corporation |
AGR18060E Lateral MOSFET AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for enhanced data for global evolution (EDGE), global system fo TriQuint Semiconductor |
MRF18060A RF POWER FIELD EFFECT TRANSISTORS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18060A/D MRF18060A RF Power Field Effect Transistors MRF18060AR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from MRF18060ASR3 1 Motorola Semiconductors |
MRF18060ALR3 RF Power Field Effect Transistors Freescale Semiconductor Technical Data Document Number: MRF18060A Rev. 9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Sui Freescale Semiconductor |
MRF18060ALSR3 RF POWER FIELD EFFECT TRANSISTORS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18060A/D MRF18060A RF Power Field Effect Transistors MRF18060AR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from MRF18060ASR3 1 Motorola Semiconductors |
MRF18060AR3 RF POWER FIELD EFFECT TRANSISTORS MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18060A/D MRF18060A RF Power Field Effect Transistors MRF18060AR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from MRF18060ASR3 1 Motorola Semiconductors |
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