APTGF100A120T データシート PDFこの部品の機能は「Phase Leg Npt Igbt Power Module」です。 |
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部品番号 |
APTGF100A120T Phase leg NPT IGBT Power Module APTGF100A120T Phase leg NPT IGBT Power Module VBUS Q1 G1 NTC2 www.Datasheet.jp VCES = 1200V IC = 100A @ Tc = 80°C Application · Welding converters · Switched Mode Power Supplies · Uninterrupt Advanced Power Technology |
文字列「 APTGF100A120 」「 100A120T 」で始まる検索結果です。 |
部品説明 |
APTGF100A120TG Phase leg NPT IGBT Power Module APTGF100A120TG Phase leg NPT IGBT Power Module VBUS Q1 G1 NTC2 VCES = 1200V IC = 100A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Non Punch Through (NPT) F Microsemi Corporation |
APTGT100A120T Phase leg Fast Trench Field Stop IGBT Power Module APTGT100A120T Phase leg Fast Trench + Field Stop IGBT® Power Module VBUS Q1 G1 NTC2 VCES = 1200V IC = 100A @ Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Fas Advanced Power Technology |
HRU100120 RHRU100120 RHRU100120 Data Sheet January 2000 File Number 3145.3 100A, 1200V Hyperfast Diode The RHRU100120 is a hyperfast diode with soft recovery characteristics (trr < 90ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated io Intersil Corporation |
R6100120 General Purpose Rectifier (200-300 Amperes Average 1200 Volts) Powerex Power Semiconductors |
RHRU100120 100A/ 1200V Hyperfast Diode RHRU100120 Data Sheet January 2000 File Number 3145.3 100A, 1200V Hyperfast Diode The RHRU100120 is a hyperfast diode with soft recovery characteristics (trr < 90ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial p Intersil Corporation |
RURU100120 100A/ 1200V Ultrafast Diode RURU100120 Data Sheet January 2000 File Number 3545.3 100A, 1200V Ultrafast Diode The RURU100120 is an ultrafast diode with soft recovery characteristics (trr < 125ns). It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial planar construction. Intersil Corporation |
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