APT8075BVFR データシート PDFこの部品の機能は「Power Mos V Is A New Generation Of High Voltage N-channel Enhancement Mode」です。 |
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部品番号 |
APT8075BVFR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT8075BVFR 800V 12A 0.750Ω POWER MOS V ® FREDFET TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect Advanced Power Technology |
文字列「 APT8075 」「 8075BVFR 」で始まる検索結果です。 |
部品説明 |
APT8075 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS D TO-247 G S APT8075BN 800V ® 13.0A 0.75Ω 12.0A 0.90Ω POWER MOS IV MAXIMUM RATINGS Symbol V DSS ID IDM V GS PD TJ,TSTG TL Parameter Drain-Source Voltage APT8090BN 800V N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: T C = 25°C unless otherwise spe Advanced Power Technology |
APT8075 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. D TO-247 G S APT8075BN 800V ® 13.0A 0.75Ω 12.0A 0.90Ω POWER MOS IV MAXIMUM RATINGS Symbol V DSS ID IDM V GS PD TJ,TSTG TL Parameter Drain-Source Voltage APT8090BN 800V N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: T C = 25°C unless otherwise spe Advanced Power Technology |
APT8075 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. D TO-247 G S APT8075BN 800V ® 13.0A 0.75Ω 12.0A 0.90Ω POWER MOS IV MAXIMUM RATINGS Symbol V DSS ID IDM V GS PD TJ,TSTG TL Parameter Drain-Source Voltage APT8090BN 800V N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: T C = 25°C unless otherwise spe Advanced Power Technology |
APT8075BN N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS D TO-247 G S APT8075BN 800V ® 13.0A 0.75Ω 12.0A 0.90Ω POWER MOS IV MAXIMUM RATINGS Symbol V DSS ID IDM V GS PD TJ,TSTG TL Parameter Drain-Source Voltage APT8090BN 800V N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: T C = 25°C unless otherwise spe Advanced Power Technology |
APT8075BVR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT8075BVR 800V 12A 0.750Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster swit Advanced Power Technology |
2KG028075JL SWITCHING DIODE CHIPS 2KG028075JL 2KG028075JL SWITCHING DIODE CHIPS DESCRIPTION Ø 2KG028075JL is a high speed switching diode chip fabricated in planar technology. Ø Ø This chip can be encapsulated as 1N4148 switching diode. This chip has several thicknesses, can suit for different plastic package. Silan Microelectronics |
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