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Datasheet APT8030 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 8 | APT8030 | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT8030B2VFR
800V 27A 0.300Ω
POWER MOS V ®
FREDFET
T-MAX™
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster swi |
 Advanced Power Technology |
 |
| 7 | APT8030B2VFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT8030B2VFR
800V 27A 0.300Ω
POWER MOS V ®
FREDFET
T-MAX™
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster swi |
Advanced Power Technology |
|
| 6 | APT8030B2VR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT8030B2VR
800V 27A 0.300Ω
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds throug |
Advanced Power Technology |
|
| 5 | APT8030JN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS D
S G D
S
G S
SO
2 T-
27
APT8030JN APT8035JN
800V 800V
27.0A 0.30Ω 25.0A 0.35Ω
ISOTOP®
"UL Recognized" File No. E145592 (S)
POWER MOS IV
MAXIMUM RATINGS
Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage
®
SINGLE DIE ISOTOP® PACKAGE
All Ratings: TC = 25°C |
Advanced Power Technology |
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