APT60GF120JRD データシート PDFこの部品の機能は「The Fast Igbt Is A New Generation Of High Voltage Power Igbts.」です。 |
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部品番号 |
APT60GF120JRD The Fast IGBT is a new generation of high voltage power IGBTs. APT60GF120JRD 1200V 100A E C Fast IGBT & FRED The Fast IGBT™ is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ul Advanced Power Technology |
文字列「 APT60GF120 」「 60GF120JRD 」で始まる検索結果です。 |
部品説明 |
APT60GF120JRDQ3 FAST IGBT & FRED TYPICAL PERFORMANCE CURVES ® APT60GF120JRDQ3 1200V APT60GF120JRDQ3 FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) o Advanced Power Technology |
7660120 Pulse Transformers C&D Technologies |
BP60120 SAW Filter 70 MHz Bandpass SAW Filter 70 MHz Bandpass SAW Filter 18 MHz Bandwidth Electronic Characteristics Parameter Center Frequency at 25°C Insertion Loss at fc 1 dB Bandwidth 3 dB Bandwidth 40dB Bandwidth Passband Variation Phase Linearity Group Delay Variation Ab Vanlong Technology |
BSTR60120 (BSTx6xxx) Silicon Controlled Rectifier Free Datasheet http:/// Siemens |
C2M0160120D Silicon Carbide Power MOSFET VDS 1200 V 17.7 A 160 mΩ C2M0160120D Silicon Carbide Power MOSFET TM Z-FET MOSFET Features Package ID(MAX) @ 25˚C RDS(on) N-Channel Enhancement Mode • • • • • High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS Cree |
HUR60120 (HUR60100 / HUR60120) High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode HUR60100, HUR60120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-247AC A C(TAB) C A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 VRRM V 1000 1200 A C Dim. A B C D E F G H J K L M N Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 ETC |
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