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Datasheet APT6030 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
5 APT6030   Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

APT6030BVFR 600V 21A 0.300W POWER MOS V ® FREDFET TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switchin
Advanced Power Technology
Advanced Power Technology
datasheet APT6030 pdf
4 APT6030   Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

APT6030BVFR 600V 21A 0.300W POWER MOS V ® FREDFET TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switchin
Advanced Power Technology
Advanced Power Technology
datasheet APT6030 pdf
3 APT6030BN   N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

D TO-247 G S APT6030BN 600V ® 23.0A 0.30Ω 22.0A 0.33Ω POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT6033BN 600V N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: TC = 25°C unless otherwise specified. APT 6030BN APT
Advanced Power Technology
Advanced Power Technology
datasheet APT6030BN pdf
2 APT6030BVFR   Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

APT6030BVFR 600V 21A 0.300W POWER MOS V ® FREDFET TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switchin
Advanced Power Technology
Advanced Power Technology
datasheet APT6030BVFR pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

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