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Datasheet APT50M80 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 9 | APT50M80 | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT50M80B2VFR
500V 58A 0.080W
POWER MOS V ®
FREDFET
T-MAX™
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster swit |
 Advanced Power Technology |
 |
| 8 | APT50M80 | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT50M80B2VFR
500V 58A 0.080W
POWER MOS V ®
FREDFET
T-MAX™
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster swit |
Advanced Power Technology |
|
| 7 | APT50M80B2LC | Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs. APT50M80B2LC APT50M80LLC
500V 58A 0.080W
POWER MOS VITM
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power |
Advanced Power Technology |
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| 6 | APT50M80B2VFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT50M80B2VFR
500V 58A 0.080W
POWER MOS V ®
FREDFET
T-MAX™
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster swit |
Advanced Power Technology |
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