| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | APT5030AN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
 Advanced Power Technology |
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Recommended search results related to APT5030AN |
| Part No | Description ( Function) | Manufacturers | |
| APT5030AVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT5030AVR 500V 14.7A 0.300Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster sw |
Advanced Power Technology |
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| APT5030BN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS D TO-247 G S APT5025BN 500V ® 23.0A 0.25Ω 21.0A 0.30Ω POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT5030BN 500V N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: TC = 25°C unless otherwise specif |
Advanced Power Technology |
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| 0895030 | Fuses Cartridge Fuses Low Profile JCASE® Fuses Rated 58V Specifications Voltage Rating: Interrupting Rating: Operating Temperature Range: Insertion Force: Extraction Force: Packaging: 58 VDC 1000A @ 58 VDC -40˚C to + 125˚C 53N Max. (12 lb.) 9N Min (2 lb.) Series |
 Littelfuse |
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| 1N5030 | Diode Zener Single 30V 5% 3W 2-Pin Case A |
 New Jersey Semiconductor |
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| 1N5030A | (1N5008A - 1N5042A) DIODE Free Datasheet http:/// |
 New Jersey Semi-Conductor |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
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| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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