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Datasheet APT5012 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | APT5012 | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT5012WVR
500V 40A 0.120Ω
POWER MOS V ®
TO-267
Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds thr |
 Advanced Power Technology |
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| 5 | APT5012 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS APT5012WVR
500V 40A 0.120Ω
POWER MOS V ®
TO-267
Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds thr |
Advanced Power Technology |
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| 4 | APT5012JN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS D
S G D
S
G S
SO
2 T-
27
APT5010JN APT5012JN
500V 500V
48.0A 0.10Ω 43.0A 0.12Ω
ISOTOP®
"UL Recognized" File No. E145592 (S)
POWER MOS IV
MAXIMUM RATINGS
Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage
®
SINGLE DIE ISOTOP® PACKAGE
All Ratings: TC = 25°C |
Advanced Power Technology |
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| 3 | APT5012JNU2 | N-Channel Enhancement Mode High Voltage Power MOSFETs w
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Advanced Power Technology |
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