データシート PDF 検索 - DataSheet.jp

APT31N60SCS データシート PDF

この部品の機能は「Super Junction Mosfet」です。


検索結果を表示する

部品番号
APT31N60SCS

Super Junction MOSFET


600V 31A 0.100Ω APT31N60BCS APT31N60SCS APT31N60BCSG* APT31N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. C O OLMOS Power Semiconductors Super Junction MOSFET (B) TO -2 47 D3PAK


Advanced Power Technology
Advanced Power Technology

データシート pdf



文字列「 APT31N60 」「 31N60SCS 」で始まる検索結果です。

部品説明

APT31N60BCS

Super Junction MOSFET

600V 31A 0.100Ω APT31N60BCS APT31N60SCS APT31N60BCSG* APT31N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. C O OLMOS Power Semiconductors Super Junction MOSFET (B) TO -2 47 D3PAK • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg �

Advanced Power Technology
Advanced Power Technology

 データシート pdf


APT31N60BCSG

Super Junction MOSFET

600V 31A 0.100Ω APT31N60BCS APT31N60SCS APT31N60BCSG* APT31N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. C O OLMOS Power Semiconductors Super Junction MOSFET (B) TO -2 47 D3PAK • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg �

Advanced Power Technology
Advanced Power Technology

 データシート pdf


APT31N60SCSG

Super Junction MOSFET

600V 31A 0.100Ω APT31N60BCS APT31N60SCS APT31N60BCSG* APT31N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. C O OLMOS Power Semiconductors Super Junction MOSFET (B) TO -2 47 D3PAK • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg �

Advanced Power Technology
Advanced Power Technology

 データシート pdf


1N3160

Diode ( Rectifier )

American Microsemiconductor
American Microsemiconductor

 データシート pdf


2SK3160

Silicon N Channel MOS FET High Speed Power Switching

2SK3160 Silicon N Channel MOS FET High Speed Power Switching ADE-208-751 (Z) 1st. Edition February 1999 Features • Low on-resistance R DS = 130 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220FM D G 1 2 S 1. Gate

Hitachi Semiconductor
Hitachi Semiconductor

 データシート pdf


2SK3160

Silicon N Channel MOS FET

2SK3160 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =130 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline REJ03G1085-0300 (Previous: ADE-208-751A) Rev.3.00 Sep 07, 2005 RENESAS Package

Renesas
Renesas

 データシート pdf

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