APT2X31DQ60J データシート PDFこの部品の機能は「Ultrafast Soft Recovery Rectifier Diode」です。 |
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部品番号 |
APT2X31DQ60J ULTRAFAST SOFT RECOVERY RECTIFIER DIODE 2 3 2 3 2 1 4 3 1 4 1 4 Anti-Parallel APT2x30DQ60J Parallel APT2x31DQ60J ISOTOP ® 27 -2 T SO "UL Recognized" www.Datasheet.jp ® APT2x31DQ60J APT2x30DQ60J 600V 600V 30A 30A DUAL Advanced Power Technology |
APT2X31DQ60J ULTRAFAST SOFT RECOVERY RECTIFIER DIODE 2 3 2 3 2 1 4 3 1 4 1 4 Anti-Parallel APT2x30DQ60J Parallel APT2x31DQ60J ISOTOP ® T SO - 7 22 www.Datasheet.jp "UL Recognized" file # E145592 APT2x31DQ60J APT2x30DQ60J 600V 600V Microsemi Corporation |
文字列「 APT2X31DQ60 」「 2X31DQ60J 」で始まる検索結果です。 |
部品説明 |
M53231600BE0 (M53231600BE0/BJ0-C) DRAM Module DRAM MODULE M53231600BE0/BJ0-C 4Byte 16Mx32 SIMM (16Mx4 base) datasheet.jpom DataShee Revision 0.1 June 1998 datasheet.jpom DataSheet 4 U .com DRAM MODULE Revision History Version 0.0 (Sept. 1997) M53231600BE0/BJ0-C • Remove Samsung Semiconductor |
M53231600BJ0-C (M53231600BE0/BJ0-C) DRAM Module DRAM MODULE M53231600BE0/BJ0-C 4Byte 16Mx32 SIMM (16Mx4 base) datasheet.jpom DataShee Revision 0.1 June 1998 datasheet.jpom DataSheet 4 U .com DRAM MODULE Revision History Version 0.0 (Sept. 1997) M53231600BE0/BJ0-C • Remove Samsung Semiconductor |
M53231600CE0 (M53231600CE0/CJ0-C) DRAM Module DRAM MODULE M53231600CE0/CJ0-C 4Byte 16Mx32 SIMM (16Mx4 base) datasheet.jpom DataShee Revision 0.0 June 1999 datasheet.jpom DataSheet 4 U .com DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb Samsung Semiconductor |
M53231600CJ0-C (M53231600CE0/CJ0-C) DRAM Module DRAM MODULE M53231600CE0/CJ0-C 4Byte 16Mx32 SIMM (16Mx4 base) datasheet.jpom DataShee Revision 0.0 June 1999 datasheet.jpom DataSheet 4 U .com DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb Samsung Semiconductor |
MRF8P23160WHR3 RF Power Field Effect Transistors Freescale Semiconductor Technical Data Document Number: MRF8P23160WH Rev. 0, 12/2011 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for base station applications with wide instantaneous bandwidth requirements covering frequencies from 2 Freescale Semiconductor |
MRF8P23160WHSR3 RF Power Field Effect Transistors Freescale Semiconductor Technical Data Document Number: MRF8P23160WH Rev. 0, 12/2011 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for base station applications with wide instantaneous bandwidth requirements covering frequencies from 2 Freescale Semiconductor |
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