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Datasheet APT28GA60K Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 APT28GA60K   High Speed PT IGBT

APT28GA60K 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate
Microsemi Corporation
Microsemi Corporation
datasheet APT28GA60K pdf

APT28GA Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
APT28GA60K

High Speed PT IGBT

APT28GA60K 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT tec
Microsemi Corporation
Microsemi Corporation
datasheet pdf - Microsemi Corporation
APT28GA60SD15

High Speed PT IGBT

APT28GA60BD15 APT28GA60SD15 600V High Speed PT IGBT ® (B) D3PAK TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superi
Microsemi Corporation
Microsemi Corporation
datasheet pdf - Microsemi Corporation
APT28GA60BD15

High Speed PT IGBT

APT28GA60BD15 APT28GA60SD15 600V High Speed PT IGBT ® (B) D3PAK TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superi
Microsemi Corporation
Microsemi Corporation
datasheet pdf - Microsemi Corporation


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Número de pieza Descripción Fabricantes PDF
SPS122

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