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APT26F120L データシート PDF

この部品の機能は「N-channel Fredfet」です。


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部品番号
APT26F120L

N-Channel FREDFET


APT26F120B2 APT26F120L www.Datasheet.jp 1200V, 26A, 0.65Ω Max, trr ≤335ns N-Channel FREDFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' vers


Microsemi Corporation
Microsemi Corporation

データシート pdf



文字列「 APT26F120 」「 26F120L 」で始まる検索結果です。

部品説明

APT26F120B2

N-Channel FREDFET

APT26F120B2 APT26F120L 1200V, 26A, 0.65Ω Max, trr ≤335ns N-Channel FREDFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability

Microsemi Corporation
Microsemi Corporation

 データシート pdf


26120

Bobbin Wound Surface Mount Inductors

2600 SERIES Bobbin Wound Surface Mount Inductors FEATURES s Bobbin Format s Up to 4.6A IDC s 3.3µH to 680µH s Optional Integral EMI Shield s Low DC Resistance s Surface Mounting s Compact Size s Tape and Reel Packaging DESCRIPTION The 2600 series is a range of bobbin wound sur

C&DTechnologies
C&DTechnologies

 データシート pdf


MRF8S26120HR3

RF Power Field Effect Transistor

Freescale Semiconductor Technical Data Document Number: MRF8S26120H Rev. 0, 6/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2620 to 2690 MHz.

Motorola Semiconductors
Motorola Semiconductors

 データシート pdf


MRF8S26120HR3

RF Power Field Effect Transistor

Freescale Semiconductor Technical Data Document Number: MRF8S26120H Rev. 0, 6/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2620 to 2690 MHz.

Motorola Semiconductors
Motorola Semiconductors

 データシート pdf


MRF8S26120HSR3

RF Power Field Effect Transistor

Freescale Semiconductor Technical Data Document Number: MRF8S26120H Rev. 0, 6/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2620 to 2690 MHz.

Motorola Semiconductors
Motorola Semiconductors

 データシート pdf


MRF8S26120HSR3

RF Power Field Effect Transistor

Freescale Semiconductor Technical Data Document Number: MRF8S26120H Rev. 0, 6/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2620 to 2690 MHz.

Motorola Semiconductors
Motorola Semiconductors

 データシート pdf

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