APT26F120L データシート PDFこの部品の機能は「N-channel Fredfet」です。 |
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部品番号 |
APT26F120L N-Channel FREDFET APT26F120B2 APT26F120L www.Datasheet.jp 1200V, 26A, 0.65Ω Max, trr ≤335ns N-Channel FREDFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' vers Microsemi Corporation |
文字列「 APT26F120 」「 26F120L 」で始まる検索結果です。 |
部品説明 |
APT26F120B2 N-Channel FREDFET APT26F120B2 APT26F120L 1200V, 26A, 0.65Ω Max, trr ≤335ns N-Channel FREDFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability Microsemi Corporation |
26120 Bobbin Wound Surface Mount Inductors 2600 SERIES Bobbin Wound Surface Mount Inductors FEATURES s Bobbin Format s Up to 4.6A IDC s 3.3µH to 680µH s Optional Integral EMI Shield s Low DC Resistance s Surface Mounting s Compact Size s Tape and Reel Packaging DESCRIPTION The 2600 series is a range of bobbin wound sur C&DTechnologies |
MRF8S26120HR3 RF Power Field Effect Transistor Freescale Semiconductor Technical Data Document Number: MRF8S26120H Rev. 0, 6/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2620 to 2690 MHz. Motorola Semiconductors |
MRF8S26120HR3 RF Power Field Effect Transistor Freescale Semiconductor Technical Data Document Number: MRF8S26120H Rev. 0, 6/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2620 to 2690 MHz. Motorola Semiconductors |
MRF8S26120HSR3 RF Power Field Effect Transistor Freescale Semiconductor Technical Data Document Number: MRF8S26120H Rev. 0, 6/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2620 to 2690 MHz. Motorola Semiconductors |
MRF8S26120HSR3 RF Power Field Effect Transistor Freescale Semiconductor Technical Data Document Number: MRF8S26120H Rev. 0, 6/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2620 to 2690 MHz. Motorola Semiconductors |
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