APT14M100B データシート PDFこの部品の機能は「N-channel Mosfet」です。 |
検索結果を表示する |
部品番号 |
APT14M100B N-Channel MOSFET APT14M100B APT14M100S 1000V, 14A, 0.88Ω Max N-Channel MOSFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reli Microsemi Corporation |
文字列「 APT14M100 」「 14M100B 」で始まる検索結果です。 |
部品説明 |
APT14M100S N-Channel MOSFET APT14M100B APT14M100S 1000V, 14A, 0.88Ω Max N-Channel MOSFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input cap Microsemi Corporation |
A14100A HiRel FPGAs v3.0 HiRel FPGAs Fe a t ur es • Low-Power 0.8µ CMOS Technology 32 0 0D X Fe a t ur es • Highly Predictable Performance with 100% Automatic Placement and Routing • Device Sizes from 1,200 to 20,000 Gates • Up to 6 Fast, Low-Skew Clock Networks • Up to 202 User-Progra Actel |
HYB314100BJ-50 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM HYB 314100BJ/BJL -50/-60/-70 Advanced Information • • • • 4 194 304 words by 1-bit organization 0 to 70 ˚C operating temperature Fast Page Mode Operation Performance: -50 -60 60 15 30 110 40 -70 70 20 35 130 45 n Siemens Semiconductor Group |
HYB314100BJ-60 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM HYB 314100BJ/BJL -50/-60/-70 Advanced Information • • • • 4 194 304 words by 1-bit organization 0 to 70 ˚C operating temperature Fast Page Mode Operation Performance: -50 -60 60 15 30 110 40 -70 70 20 35 130 45 n Siemens Semiconductor Group |
HYB314100BJ-70 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM HYB 314100BJ/BJL -50/-60/-70 Advanced Information • • • • 4 194 304 words by 1-bit organization 0 to 70 ˚C operating temperature Fast Page Mode Operation Performance: -50 -60 60 15 30 110 40 -70 70 20 35 130 45 n Siemens Semiconductor Group |
HYB314100BJBJL-50- 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM HYB 314100BJ/BJL -50/-60/-70 Advanced Information • • • • 4 194 304 words by 1-bit organization 0 to 70 ˚C operating temperature Fast Page Mode Operation Performance: -50 -60 60 15 30 110 40 -70 70 20 35 130 45 n Siemens Semiconductor Group |
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