APT11GP60K データシート PDFこの部品の機能は「Power Mos 7 Igbt」です。 |
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部品番号 |
APT11GP60K POWER MOS 7 IGBT TYPICAL PERFORMANCE CURVES APT11GP60K_SA APT11GP60K APT11GP60SA www.Datasheet.jp 600V POWER MOS 7 IGBT ® (K) TO-220 (SA) D2PAK The POWER MOS 7® IGBT is a new generation of high voltage powe Advanced Power Technology |
文字列「 APT11GP60 」「 11GP60K 」で始まる検索結果です。 |
部品説明 |
APT11GP60BDQB POWER MOS 7 IGBT TYPICAL PERFORMANCE CURVES APT11GP60BDQB APT11GP60BDQB 600V POWER MOS 7 IGBT ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applic Advanced Power Technology |
APT11GP60SA POWER MOS 7 IGBT TYPICAL PERFORMANCE CURVES APT11GP60K_SA APT11GP60K APT11GP60SA 600V POWER MOS 7 IGBT ® (K) TO-220 (SA) D2PAK The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequen Advanced Power Technology |
2SA1160 Silicon PNP Epitaxial Type Transistor TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications 2SA1160 Unit: mm • High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 Toshiba Semiconductor |
2SA1160 Plastic-Encapsulated Transistors Transys Electronics L I M I T E D TO-92MOD Plastic-Encapsulated Transistors TO-92MOD 1. EMITTER 2SA1160 FEATURE Power dissipation TRANSISTOR (PNP) 2. COLLECTOR 3. BASE ww.datasheet.jpom PCM : 0.9 W (Tamb=25℃) Collector current ICM: -2A Collector-base voltage V(BR)CBO: - TRANSYS Electronics Limited |
2SB1160 SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1160 DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1715 ·High fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifi SavantIC |
2SD1160 Silicon NPN Epitaxial Type TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SD1160 Switching Applications Suitable for Motor Drive Applications 2SD1160 Unit: mm • High DC current gain • Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA) • Built-in free wheel diode Ab Toshiba Semiconductor |
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