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APT11GP60K データシート PDF

この部品の機能は「Power Mos 7 Igbt」です。


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部品番号
APT11GP60K

POWER MOS 7 IGBT


TYPICAL PERFORMANCE CURVES APT11GP60K_SA APT11GP60K APT11GP60SA www.Datasheet.jp 600V POWER MOS 7 IGBT ® (K) TO-220 (SA) D2PAK The POWER MOS 7® IGBT is a new generation of high voltage powe


Advanced Power Technology
Advanced Power Technology

データシート pdf



文字列「 APT11GP60 」「 11GP60K 」で始まる検索結果です。

部品説明

APT11GP60BDQB

POWER MOS 7 IGBT

TYPICAL PERFORMANCE CURVES APT11GP60BDQB APT11GP60BDQB 600V POWER MOS 7 IGBT ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applic

Advanced Power Technology
Advanced Power Technology

 データシート pdf


APT11GP60SA

POWER MOS 7 IGBT

TYPICAL PERFORMANCE CURVES APT11GP60K_SA APT11GP60K APT11GP60SA 600V POWER MOS 7 IGBT ® (K) TO-220 (SA) D2PAK The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequen

Advanced Power Technology
Advanced Power Technology

 データシート pdf


2SA1160

Silicon PNP Epitaxial Type Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications 2SA1160 Unit: mm • High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120

Toshiba Semiconductor
Toshiba Semiconductor

 データシート pdf


2SA1160

Plastic-Encapsulated Transistors

Transys Electronics L I M I T E D TO-92MOD Plastic-Encapsulated Transistors TO-92MOD 1. EMITTER 2SA1160 FEATURE Power dissipation TRANSISTOR (PNP) 2. COLLECTOR 3. BASE ww.datasheet.jpom PCM : 0.9 W (Tamb=25℃) Collector current ICM: -2A Collector-base voltage V(BR)CBO: -

TRANSYS Electronics Limited
TRANSYS Electronics Limited

 データシート pdf


2SB1160

SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1160 DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1715 ·High fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifi

SavantIC
SavantIC

 データシート pdf


2SD1160

Silicon NPN Epitaxial Type TRANSISTOR

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SD1160 Switching Applications Suitable for Motor Drive Applications 2SD1160 Unit: mm • High DC current gain • Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA) • Built-in free wheel diode Ab

Toshiba Semiconductor
Toshiba Semiconductor

 データシート pdf

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