Datasheet APT10M11LVR Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	APT10M11LVR	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs APT10M11LVR 100V 100A 0.011Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds throu	Advanced Power Technology

APT10M11 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
APT10M11LVR	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs APT10M11LVR 100V 100A 0.011Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster sw	Advanced Power Technology
APT10M11JVR	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT10M11JVR 100V 144A 0.011Ω S D POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faste	Advanced Power Technology
APT10M11B2VR	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT10M11B2VR 100V 100A 0.011Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster s	Advanced Power Technology

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Número de pieza	Descripción	Fabricantes	PDF
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