APT10050LLC データシート PDFこの部品の機能は「Power Mos Vitm Is A New Generation Of Low Gate Charge/ High Voltage」です。 |
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部品番号 |
APT10050LLC Power MOS VITM is a new generation of low gate charge/ high voltage APT10050B2LC APT10050LLC 1000V 21A 0.500W B2LC POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achiev Advanced Power Technology |
文字列「 APT10050 」「 10050LLC 」で始まる検索結果です。 |
部品説明 |
APT10050B2LC Power MOS VITM is a new generation of low gate charge/ high voltage Advanced Power Technology |
APT10050B2VFR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT10050B2VFR APT10050LVFR POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switchi Advanced Power Technology |
APT10050B2VR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT10050B2VR 1000V 21A 0.500Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster s Advanced Power Technology |
APT10050JLC Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs. APT10050JLC 1000V 19A S G D 0.500Ω S POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge Advanced Power Technology |
APT10050JN N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS D S G D S G S SO 2 T- 27 APT10050JN 1000V 20.5A 0.50Ω "UL Recognized" File No. E145592 (S) ISOTOP® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage ® SINGLE DIE ISOTOP® PACKAGE All Ratings: TC = 25°C unless oth Advanced Power Technology |
APT10050JVFR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT10050JVFR 1000V 19A 0.500Ω S G D S POWER MOS V ® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also Advanced Power Technology |
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