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Datasheet APT1004 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
19 | APT1004 | N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS D
TO-254
G S
APT1004RCN 1000V 3.6A 4.00Ω
TM
POWER MOS IV
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
All Ratings: TC = 25°C unless otherwise specified.
APT1004RCN UNIT Volts Amps
1000 3.6 14.4 ±3 |
Advanced Power Technology |
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18 | APT10040B2VFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT10040B2VFR APT10040LVFR
POWER MOS V ®
FREDFET
B2VFR
1000V 25A 0.400W
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves f |
Advanced Power Technology |
|
17 | APT10040B2VR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs APT10040B2VR APT10040LVR
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through opti |
Advanced Power Technology |
|
16 | APT10040LVFR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT10040B2VFR APT10040LVFR
POWER MOS V ®
FREDFET
B2VFR
1000V 25A 0.400W
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves f |
Advanced Power Technology |
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Número de pieza | Descripción | Fabricantes | |
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