APT1002RCN データシート PDFこの部品の機能は「N - Channel Enhancement Mode High Voltage Power Mosfets」です。 |
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部品番号 |
APT1002RCN N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS D TO-254 G S APT1002RCN 1000V 5.5A 2.00Ω TM POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFE Advanced Power Technology |
APT1002RCN (APT Series) N-Channel Enhancement Mode High Voltage Power MOSFET www.Datasheet.jp w w w .D at h S a t e e 4U . m o c www.Datasheet.jp w w w .D at h S a t e e 4U . m o c www.Datasheet.jp w w w .D at h S a t e e 4U . m o c ww Advanced Power Technology |
文字列「 APT1002 」「 1002RCN 」で始まる検索結果です。 |
部品説明 |
APT10021DFN (APT9021DFN / APT10021DFN) N-Channel Enhancement Mode High Voltage Power MOSFET w w w a t a D . S 4 t e e h U m o .c w w w a t a D . S 4 t e e h U m o .c Advanced Power Technology |
APT10021JFLL Power MOS 7 is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. APT10021JFLL 1000V 37A 0.210W POWER MOS 7TM FREDFET S G D S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Po Advanced Power Technology |
APT10021JLL Power MOS 7 is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. APT10021JLL 1000V 37A 0.210W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combine Advanced Power Technology |
APT10025JLC Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs APT10025JLC 1000V 34A S G D 0.250W S POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge c Advanced Power Technology |
APT10025JVFR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT10025JVFR 1000V 34A 0.250Ω S G D S POWER MOS V ® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also Advanced Power Technology |
APT10025JVR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT10025JVR 1000V 34A 0.250Ω S G D S POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves f Advanced Power Technology |
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