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Datasheet APT1002RBN Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | APT1002RBN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS D
TO-247
G S
APT1002RBN
®
1000V 7.0A 2.00Ω
POWER MOS IV
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage
APT1002R4BN 1000V 6.5A 2.40Ω
All Ratings: TC = 25°C unless otherwise specified.
APT 1002RBN APT 1002R4BN UNIT Volts Amps
N - CHANNEL ENHANCEMENT MOD |
 Advanced Power Technology |
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| 1 | APT1002RBN | (APT Series) N-Channel Enhancement Mode High Voltage Power MOSFET |
Advanced Power Technology |
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