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APT1001RBVR データシート PDF

この部品の機能は「Power Mos V Is A New Generation Of High Voltage N-channel Enhancement Mode」です。


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部品番号
APT1001RBVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.


APT1001RBVR 1000V 11A 1.000Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases pack


Advanced Power Technology
Advanced Power Technology

データシート pdf



文字列「 APT1001 」「 1001RBVR 」で始まる検索結果です。

部品説明

APT1001

Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs

APT1001RBLC APT1001RSLC 1000V 11A 1.000W BLC D3PAK TO-247 POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.

Advanced Power Technology
Advanced Power Technology

 データシート pdf


APT1001

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

APT1001RBLC APT1001RSLC 1000V 11A 1.000W BLC D3PAK TO-247 POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.

Advanced Power Technology
Advanced Power Technology

 データシート pdf


APT1001R1AVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs

APT1001R1AVR 1000V 9A 1.100Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster sw

Advanced Power Technology
Advanced Power Technology

 データシート pdf


APT1001R1BN

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

D TO-247 G S APT1001R1BN 1000V 10.5A 1.10Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT1001R3BN 1000V 10.0A 1.30Ω All Ratings: TC = 25°C unless otherwise specified. APT 1001RBN APT 1001R3BN UNIT Volts Amps N - C

Advanced Power Technology
Advanced Power Technology

 データシート pdf


APT1001R1BVFR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

APT1001R1BVFR 1000V 11A 1.100Ω POWER MOS V ® FREDFET TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also

Advanced Power Technology
Advanced Power Technology

 データシート pdf


APT1001R1HVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

APT1001R1HVR 1000V 9A 1.100Ω POWER MOS V ® TO-258 Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faste

Advanced Power Technology
Advanced Power Technology

 データシート pdf

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