APT1001RBVR データシート PDFこの部品の機能は「Power Mos V Is A New Generation Of High Voltage N-channel Enhancement Mode」です。 |
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部品番号 |
APT1001RBVR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT1001RBVR 1000V 11A 1.000Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases pack Advanced Power Technology |
文字列「 APT1001 」「 1001RBVR 」で始まる検索結果です。 |
部品説明 |
APT1001 Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs APT1001RBLC APT1001RSLC 1000V 11A 1.000W BLC D3PAK TO-247 POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Advanced Power Technology |
APT1001 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS APT1001RBLC APT1001RSLC 1000V 11A 1.000W BLC D3PAK TO-247 POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Advanced Power Technology |
APT1001R1AVR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs APT1001R1AVR 1000V 9A 1.100Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster sw Advanced Power Technology |
APT1001R1BN N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS D TO-247 G S APT1001R1BN 1000V 10.5A 1.10Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT1001R3BN 1000V 10.0A 1.30Ω All Ratings: TC = 25°C unless otherwise specified. APT 1001RBN APT 1001R3BN UNIT Volts Amps N - C Advanced Power Technology |
APT1001R1BVFR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT1001R1BVFR 1000V 11A 1.100Ω POWER MOS V ® FREDFET TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also Advanced Power Technology |
APT1001R1HVR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT1001R1HVR 1000V 9A 1.100Ω POWER MOS V ® TO-258 Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faste Advanced Power Technology |
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