|
|
Datasheet APT1001 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
15 | APT1001 | Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs APT1001RBLC APT1001RSLC
1000V 11A 1.000W
BLC D3PAK
TO-247
POWER MOS VITM
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge c |
Advanced Power Technology |
|
14 | APT1001 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS APT1001RBLC APT1001RSLC
1000V 11A 1.000W
BLC D3PAK
TO-247
POWER MOS VITM
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge c |
Advanced Power Technology |
|
13 | APT1001R1AVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs APT1001R1AVR
1000V 9A 1.100Ω
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds throu |
Advanced Power Technology |
|
12 | APT1001R1BN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS D
TO-247
G S
APT1001R1BN 1000V 10.5A 1.10Ω
®
POWER MOS IV
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage
APT1001R3BN 1000V 10.0A 1.30Ω
All Ratings: TC = 25°C unless otherwise specified.
APT 1001RBN APT 1001R3BN UNIT Volts Amps
N - CHANNEL ENHANCEMENT M |
Advanced Power Technology |
Esta página es del resultado de búsqueda del APT1001. Si pulsa el resultado de búsqueda de APT1001 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |