APM9988QB PDF Datasheet

APM9988QB ® Dual N-Channel Enhancement Mode MOSFET Features · 20V/8A, RDS(ON)=17.5mW (Max.) @ VGS=4.5V RDS(ON)=18.5mW (Max.) @ VGS=4V RDS(ON)=22mW (Max.) @ VGS=3.1V RDS(ON)=27.5mW (Max.) @ VGS=2.5V · Reliable and Rugged · Lead Free and Green Devices Available (RoHS Compliant) Pin Description S2 S2 G2 S1 S1 G1 Top View of TDFN2x5-6 DD Applications · Power Management in

APM9988CO Dual N-Channel Enhancement Mode MOSFET Features • • • • 20V/6A , RDS(ON)=16mΩ(typ.) @ VGS=4.5V RDS(ON)=19mΩ(typ.) @ VGS=2.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Pin Description Top Vie

APM9988QA ® Dual N-Channel Enhancement Mode MOSFET Features · 20V/6A, RDS(ON)= 20mW(max.) @ VGS= 4.5V RDS(ON)= 21mW(max.) @ VGS= 4V RDS(ON)= 24mW(max.) @ VGS= 3V RDS(ON)= 30mW(max.) @ VGS= 2.5V · Reliable and Rugged · ESD Rating : 2KV HBM · Lead Free and Green Devices Avai

datasheet39.com GC9981 – GC9989 TM ® Schottky Barrier Diodes Ultra High Drive Monolithic RoHS Compliant DESCRIPTION Microsemi’s Schottky Barrier devices are currently available in the eight junction ring quad configuration. Devices are available in monolithic form fo

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Si9988 New Product Vishay Siliconix Buffered H-Bridge FEATURES D D D D D D D 0.65-A H-Bridge 200-kHz Switching Rate Shoot-Through Limited TTL Compatible Inputs 3.8- to 13.2-V Operating Range Surface Mount Packaging Total rDS(on) for N- and P-Channel: 1.8 W @ VDD = 4.5 V and TA