APM2313A データシート PDFこの部品の機能は「P-channel Enhancement Mode Mosfet」です。 |
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部品番号 |
APM2313A P-Channel Enhancement Mode MOSFET APM2313A P-Channel Enhancement Mode MOSFET Features Pin Description • -20V/-2.5A , RDS(ON)=108mΩ (typ.) @ VGS=-4.5V RDS(ON)=135mΩ (typ.) @ V =-2.5V GS • Super High Dense Cell Design Etc |
APM2313A P-Channel Enhancement Mode MOSFET Anpec Electronics |
文字列「 APM2313 」「 2313A 」で始まる検索結果です。 |
部品説明 |
APM2313 P-Channel Enhancement Mode MOSFET APM2313 P-Channel Enhancement Mode MOSFET Features • • • • -20V/-1.8A , RDS(ON)=108mΩ(typ.) @ VGS=-4.5V RDS(ON)=135mΩ(typ.) @ VGS=-2.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SOT-23 Package Pin Description D G S Top View of SOT Etc |
APM2313 P-Channel Enhancement Mode MOSFET APM2313 P-Channel Enhancement Mode MOSFET Features Pin Description • -20V/-1.8A , RDS(ON)=108mΩ(typ.) @ V =-4.5V GS RDS(ON)=135mΩ(typ.) @ V =-2.5V GS • Super High Dense Cell Design for Extremely Low RDS(ON) • Reliable and Rugged • SOT-23 Package Applic Anpec Electronics |
2SK2313 Silicon N Channel MOS Type Field Effect Transistor 2SK2313 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2313 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 8 mΩ (typ.) z High forward transfer admit Toshiba Semiconductor |
90S2313 8-Bit Microcontroller with 2K bytes In-System Programmable Flash Features • AVR® - High Performance and Low Power RISC Architecture • 118 Powerful Instructions - Most Single Clock Cycle Execution • 2K bytes of In-System Reprogrammable Flash • • • • • • • • • • • • • • • • • – SPI Serial Interface for ATMEL Corporation |
AG231344 Signal relay ୋܹ࢘ܩÅ౭຺dzȇȵǸ FF$Åഽ႕P:Ȳȴà LQGXVWULDOSDQDVRQLFFRPDF 1 F 3DQDVRQLF&RUSRUDWLRQ $6&7%-Å' șȒȅȓȋǷېৼٯÅୋܹ࢘ূܩ ÅLQGXVWULDOSDQDVRQLFFRPDF 2 F 3DQDVRQL Panasonic |
ALN2313R2 Internally Matched LNA Module plerowTM ALN2313R2 Internally Matched LNA Module Description The plerowTM ALN-series is the compactly designed surface-mount module for the use of the LNA with or without the following gain blocks in the infrastructure equipment of the mobile wireless (CDMA, Advanced Semiconductor |
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