APM1110K データシート PDFこの部品の機能は「N-channel Enhancement Mode Mosfet」です。 |
検索結果を表示する |
部品番号 |
APM1110K N-Channel Enhancement Mode MOSFET APM1110K Features · 100V/2.7A, RDS(ON)=140mW (typ.) @ VGS=10V RDS(ON)=185mW (typ.) @ VGS=4.5V · ESD Protected · Reliable and Rugged · Lead Free and Green Devices Available (RoHS Compliant) Applica Sinopower |
文字列「 APM1110 」「 1110K 」で始まる検索結果です。 |
部品説明 |
APM1110NU N-Channel Enhancement Mode MOSFET APM1110NU/APM1110NUB ® N-Channel Enhancement Mode MOSFET Features • 100V/10A, RDS(ON)= 175mΩ (max.) @ VGS=10V RDS(ON)= 235mΩ (max.) @ VGS=4.5V • ESD Protected • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) • 100% UIS + R Te Sinopower |
APM1110NUB N-Channel Enhancement Mode MOSFET APM1110NU/APM1110NUB ® N-Channel Enhancement Mode MOSFET Features • 100V/10A, RDS(ON)= 175mΩ (max.) @ VGS=10V RDS(ON)= 235mΩ (max.) @ VGS=4.5V • ESD Protected • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) • 100% UIS + R Te Sinopower |
1110A 200 V - 1000 V Single Phase Bridge 200 V - 1,000 V Single Phase Bridge 1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery Time 1102A - 1110A 1102FA - 1110FA 1102UFA - 1110UFA ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage (Vrwm) Average Rectified Current @TC (Io) 55°C Vol ETC |
1110A Diode ( Rectifier ) American Microsemiconductor |
1110B (1110xB) Single Phase Bridge 200 V - 1,000 V Single Phase Bridge 1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery Time 1102B - 1110B 1102FB - 1110FB 1102UFB - 1110UFB ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage (Vrwm) Average Rectified Curre VMI |
1110B Diode ( Rectifier ) American Microsemiconductor |
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