Datasheet APEHT-0103 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	APEHT-0103	High Temperature Silicon Carbide Schottky Diode PRELIMINARY APE HT-0103 High Temperature Silicon Carbide Schottky Diode FEATURES  High temperature: Tc(max) = 225 C 1200 V / 10 A / 64 nC Tj(max) = 225 C  AS9100:Rev. C-certified manufacturing, traceable throughout value chain  Near zero forward and reverse recovery  Extremel	APEI

APEHT-0 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
APEHT-0103	High Temperature Silicon Carbide Schottky Diode PRELIMINARY APE HT-0103 High Temperature Silicon Carbide Schottky Diode FEATURES  High temperature: Tc(max) = 225 C 1200 V / 10 A / 64 nC Tj(max) = 225 C  AS9100:Rev. C-certified manufacturing, traceable throughout value chain  Near zero forward and reverse re	APEI

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Número de pieza	Descripción	Fabricantes	PDF
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