AP2623GY-HF データシート PDFこの部品の機能は「Dual P-channel Enhancement Mode Power Mosfet」です。 |
検索結果を表示する |
部品番号 |
AP2623GY-HF DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp. AP2623GY-HF Halogen-Free Product DUAL P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Low On-resistance ▼ Surface Mount Package ▼ RoHS Compliant Advanced Power Electronics |
文字列「 AP2623 」「 2623GY 」で始まる検索結果です。 |
部品説明 |
AP2623GY P-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp. AP2623GY Pb Free Plating Product P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Low On-resistance ▼ Surface Mount Package G1 Description D1 G2 S1 D2 S2 Advanced Power MOSFETs utilized advanced processing techniques to ach Advanced Power Electronics |
AP2623Y P-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp. AP2623Y P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Low On-resistance ▼ Surface Mount Package G1 Description D1 G2 S1 D2 S2 Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible Advanced Power Electronics |
1N2623 GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor |
1N2623A GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor |
1N2623B GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor |
2623CS 10Gbits/sLithiumNiobateElectro-OpticModulator Data Sheet May 2001 10 Gbits/s Lithium Niobate Electro-Optic Modulator Features s s s s s s Ti-diffusion process Single-drive technology C- and L-band models Slim, hermetic package Bandwidths up to 10 GHz Operational over a temperature range of 0 °C to 70 °C 43 Ω design for AgereSystems |
当社のサイトでは、半導体やセンサーからモーター、電源に至るまで、さまざまな製品のデータシートを簡単に検索してダウンロードできる集中型プラットフォームを提供しています。 |