AP2612GY-HF データシート PDFこの部品の機能は「N-channel Enhancement Mode Power Mosfet」です。 |
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部品番号 |
AP2612GY-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET AP2612GY-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Capable of 1.8V Gate Drive ▼ Simple Drive Requirement ▼ Surface Mount Device ▼ RoHS Compliant D D N-CHANNEL ENHANCEMENT MO Advanced Power Electronics |
文字列「 AP2612 」「 2612GY 」で始まる検索結果です。 |
部品説明 |
1N2612 GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor |
1N2612B GOLD BONDED GERMANIUM DIODES New Jersey Semiconductor |
26120 Bobbin Wound Surface Mount Inductors 2600 SERIES Bobbin Wound Surface Mount Inductors FEATURES s Bobbin Format s Up to 4.6A IDC s 3.3µH to 680µH s Optional Integral EMI Shield s Low DC Resistance s Surface Mounting s Compact Size s Tape and Reel Packaging DESCRIPTION The 2600 series is a range of bobbin wound sur C&DTechnologies |
2612G LED BACKLIGHT MicroElectronics |
2SC2612 Silicon NPN Triple Diffused 2SC2612 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to bas Hitachi Semiconductor |
2SC2612 SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2612 DESCRIPTION ·With TO-220 package ·High collector breakdown voltage : VCEO=400V(Min) APPLICATIONS ·For high voltage ,high speed and high power switching applications PINNI SavantIC |
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