AP2329GN-HF データシート PDFこの部品の機能は「P-channel Enhancement Mode Power Mosfet」です。 |
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部品番号 |
AP2329GN-HF P-CHANNEL ENHANCEMENT MODE POWER MOSFET AP2329GN-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device ▼ RoHS Compliant & Halogen-Free SOT-23 D P-CHANNEL Advanced Power Electronics |
文字列「 AP2329 」「 2329GN 」で始まる検索結果です。 |
部品説明 |
AP2329GN-HF-3 P-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp. AP2329GN-HF-3 P-channel Enhancement-mode Power MOSFET Simple Drive Requirement Lower On-resistance Surface Mount Device RoHS-compliant, halogen-free D BV DSS G S -30V 48mΩ -4.3A R DS(ON) ID Description Advanced Power MOSFETs from APEC pro Advanced Power Electronics |
2N2329 Silicon Controlled Rectifier 2N232x Series Silicon Controlled Rectifier Features Available in JAN, JANTX, JANTXV per MIL-PRF19500/276 TO-5 & TO-39 (TO-205AD) Package Rev. V2 Electrical Characteristics Characteristics Symbol Min. Max. Units Subgroup 2 Testing Reverse Blocking Current Forward Blo MA-COM |
2N2329 SCRs 1.6 Amp / Planear Microsemi |
2N2329 (2N2327 - 2N2329) SILICON THYRISTORS 2N2327 thur 2N2329 SILICON THYRISTORS All-diffused PNPN thyristors designed for grating operation in mA/µA signal or detection circuits Compliance to RoHS. MAXIMUM RATINGS (*) TJ=125°C unless otherwise noted, RGK=1000Ω Symbol VRSM(REP) VRSM(NONREP) Ratings Peak reverse bl Comset Semiconductors |
2N2329 Thyristor SCR 400V 15A 3-Pin TO-5 New Jersey Semiconductor |
2N2329 SILICON CONTROLLED RECTIFIER 2N2322 2N2323 2N2324 2N2325 2N2326 2N2327 2N2328 2N2329 SILICON CONTROLLED RECTIFIER 1.6 AMPS, 25 THRU 400 VOLTS CentralTM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2322 Series types are hermetically sealed Silicon Controlled Rectifiers designed for sensing Central Semiconductor |
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