AP11SL60I-A-HF データシート PDFこの部品の機能は「N-channel Enhancement Mode Power Mosfet」です。 |
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部品番号 |
AP11SL60I-A-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp. AP11SL60I-A-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant & Halog Advanced Power Electronics |
文字列「 AP11SL60 」「 11SL60I 」で始まる検索結果です。 |
部品説明 |
2SA1160 Silicon PNP Epitaxial Type Transistor TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications 2SA1160 Unit: mm • High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 Toshiba Semiconductor |
2SA1160 Plastic-Encapsulated Transistors Transys Electronics L I M I T E D TO-92MOD Plastic-Encapsulated Transistors TO-92MOD 1. EMITTER 2SA1160 FEATURE Power dissipation TRANSISTOR (PNP) 2. COLLECTOR 3. BASE ww.datasheet.jpom PCM : 0.9 W (Tamb=25℃) Collector current ICM: -2A Collector-base voltage V(BR)CBO: - TRANSYS Electronics Limited |
2SB1160 SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1160 DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1715 ·High fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifi SavantIC |
2SD1160 Silicon NPN Epitaxial Type TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SD1160 Switching Applications Suitable for Motor Drive Applications 2SD1160 Unit: mm • High DC current gain • Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA) • Built-in free wheel diode Ab Toshiba Semiconductor |
2SK1160 Silicon N-Channel MOS FET 2SK1159, 2SK1160 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline TO-220AB Hitachi Semiconductor |
2SK1160 Silicon N Channel MOS FET 2SK1159, 2SK1160 Silicon N Channel MOS FET REJ03G0911-0200 (Previous: ADE-208-1249) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching r Renesas |
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