AP1119 データシート PDFこの部品の機能は「0.5a Positive Low Dropout Fixed-mode Regulator」です。 |
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部品番号 |
AP1119 0.5A Positive Low Dropout Fixed-Mode Regulator www.Datasheet.jp AP1119 0.5A Positive Low Dropout Fixed-Mode Regulator With EN Function Features • • • • • • • General Description AP1119 is a low dropout positive adjustable or fi Anachip |
文字列「 AP1119 」「 1119 」で始まる検索結果です。 |
部品説明 |
2DB1119S PNP SURFACE MOUNT TRANSISTOR 2DB1119S PNP SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • Epitaxial Planar Die Construction • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Lead Free By Design/RoHS Compliant (Note 1) • "Green" De Diodes |
2N1119 Small Signal Transistors Small Signal Transistors TO-39 Case TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ (µA) *ICEO **ICES ***ICEV ****ICER MIN 6.0 6.0 5.0 5.0 7.0 7.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 5.0 6.0 5.0 5.0 5.0 6.0 6.0 6.0 6.0 6.0 5.0 5.0 5.0 7.0 6.0 4.5 6.0 7.0 7.0 6.0 6.0 7.0 ETC |
2SB1119 PNP/NPN Epitaxial Planar Silicon Transistors Ordering number:1785A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1119/2SD1619 LF Amplifier, Electronic Governor Applications Features · Very small size making it easy to provide highdensity, small-sized hybrid IC’s. Package Dimensions unit:mm 2038 [2SB1119/2SD1619] ( Sanyo Semicon Device |
2SB1119 Plastic-Encapsulated Transistors Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors 2SB1119 FEATURES Power dissipation PCM: 500 mW (Tamb=25℃) 2. COLLECTOR 3. EMITTER 1 2 3 TRANSISTOR (PNP) SOT-89 1. BASE Collector current -1 A ICM: Collector current (Pulse) ICP: -2 A Collector-base vo TRANSYS |
2SB1119 Transistor SMD Type Transistors PNP Epitaxial Planar Silicon Transistors 2SB1119 Features Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Co Kexin |
2SB1119 PNP Silicon Medium Power Transistor 2SB1119/2SD1619 Elektronische Bauelemente RoHS Compliant Product D D1 A PNP Silicon Medium Power Transistor SOT-89 E1 FEATURES b1 Power dissipation P CM : 500mW˄Tamb=25ć˅ 1.BASE Collector current 2.COLLECTOR A ICM : -1 3.EMITTER Collector-base voltage V VB(BR) SeCoS |
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