AP05G120SW-HF データシート PDFこの部品の機能は「N-channel Insulated Gate Bipolar Transistor」です。 |
検索結果を表示する |
部品番号 |
AP05G120SW-HF N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Advanced Power Electronics Corp. AP05G120SW-HF Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat)=2.3V@I Advanced Power Electronics |
文字列「 AP05G120 」「 05G120SW 」で始まる検索結果です。 |
部品説明 |
AP05G120NSW-HF N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Advanced Power Electronics Corp. AP05G120NSW-HF Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features ▼ High Speed Switching ▼ NPT Technology ▼ RoHS Compliant & Halogen-Free GC E Absolute Maximum Ratings Symbol Parameter VCES VGE IC@TC=2 Advanced Power Electronics |
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828305120000x (8283 Series) Plug Straight w w w .D at aS he et 4U .c om Kyocera |
C2D05120 Silicon Carbide Schottky Diode C2D05120–Silicon Carbide Schottky Diode Zero Recovery® Rectifier Features • • • • • • • VRRM = 1200 V IF = 5 A Qc = 28 nC Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temper CREE |
C2D05120A Silicon Carbide Schottky Diode C2D05120A Silicon Carbide Schottky Diode VRRM = 1200 V Zero R Features ecovery® Rectifier Package IF (TC=135˚C) = 8.5 A Qc = 28 nC • • • • • • • 1.2kV Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Volta Cree |
C2D05120E Silicon Carbide Schottky Diode C2D05120E Silicon Carbide Schottky Diode VRRM = 1200 V Zero R Features ecovery® Rectifier Package IF (TC=135˚C) = 8.5 A Qc = 28 nC • • • • • • • 1.2kV Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage Cree |
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