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Datasheet AP02N60H-H Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | AP02N60H-H | N-CHANNEL ENHANCEMENT MODE POWER MOSFET AP02N60H/J-H
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ 100% Avalanche Test ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ Simple Drive Requirement
G S D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
700V 8.8Ω 1.4A
Description
G D
The TO-252 package is |
 Advanced Power Electronics |
 |
| 4 | AP02N60H-H-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp.
AP02N60H/J-H-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ Simple Drive Requirement ▼ RoHS Compliant
G
D S
Description
The TO-252 package is widely preferred for all commercial-indus |
Advanced Power Electronics |
|
| 3 | AP02N60H-H-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp.
AP02N60H/J-H-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Speed RoHS-compliant, halogen-free G S D
BV DSS R DS(ON) ID
700V 8.8Ω 1.4A
Description
Advanced Power MOSFETs from APEC provide the des |
Advanced Power Electronics |
|
| 2 | AP02N60H-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics Corp.
AP02N60H/J-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Test ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ RoHS Compliant
G
D S
BVDSS RDS(ON) ID
600V 8Ω 1.6A
Description
The TO-252 package is widely preferred for |
Advanced Power Electronics |
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