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Datasheet AON5810 Equivalent ( PDF ) |
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| 2 | AON5810 | Common-Drain Dual N-Channrl Enhancement Mode Field Effect Transistor AON5810
Common-Drain Dual N-Channrl Enhancement Mode Field Effect Transistor
General Description
The AON5810 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V V GS(MAX) rating. It is ESD protected. Th |
 FreesCale |
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| 1 | AON5810 | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor AON5810 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AON5810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This |
 Alpha & Omega Semiconductors |
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