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Datasheet AON5802B Equivalent ( PDF ) |
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| 3 | AON5802B | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor AON5802B
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AON5802B/L uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V V GS(MAX) rating. This device is suit |
 FreesCale |
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| 2 | AON5802B | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor AON5802B Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AON5802B/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. This device is suitabl |
 Alpha & Omega Semiconductors |
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| 1 | AON5802B | N-Channel 20-V (D-S) MOSFET Freescale
AON5802B/ MCN5802B
N-Channel 20-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits
PRODUCT SUMMARY rDS(on) ( |
FreesCale |
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