Datasheet AON3816 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	AON3816	Field Effect Transistor AON3816 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AON3816/L uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD protected. This device is suitable for use as a unidirectional or bi-directional	Alpha & Omega Semiconductors

AON3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
AON3814	Field Effect Transistor AON3814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description provide Features VDS (V) = 20V ID = 6A (VGS = 4.5V) RDS(ON) < 17mΩ (VGS = 4.5V) RDS(ON) < 18.5mΩ (VGS = 4V) RDS(ON) < 24mΩ (VGS = 2.5V) RDS(ON) < 39mΩ (VG	Alpha & Omega Semiconductors
AON3702	N-Channel MOSFET General Description SRFETTM AON3702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. AON37	Alpha & Omega Semiconductors
AON3408	N-Channel Enhancement Mode Field Effect Transistor AON3408 N-Channel Enhancement Mode Field Effect Transistor General Description The AON3408 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to	Freescale

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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