Datasheet AON3601 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	AON3601	Field Effect Transistor AON3601 Complementary Enhancement Mode Field Effect Transistor General Description The AON3601 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in power inverters, and other applications.Standard Produ	Alpha & Omega Semiconductors

AON3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
AON3814	Field Effect Transistor AON3814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description provide Features VDS (V) = 20V ID = 6A (VGS = 4.5V) RDS(ON) < 17mΩ (VGS = 4.5V) RDS(ON) < 18.5mΩ (VGS = 4V) RDS(ON) < 24mΩ (VGS = 2.5V) RDS(ON) < 39mΩ (VG	Alpha & Omega Semiconductors
AON3702	N-Channel MOSFET General Description SRFETTM AON3702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. AON37	Alpha & Omega Semiconductors
AON3408	N-Channel Enhancement Mode Field Effect Transistor AON3408 N-Channel Enhancement Mode Field Effect Transistor General Description The AON3408 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to	Freescale

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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