AOL1424 データシート PDFこの部品の機能は「N-channel Mosfet」です。 |
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部品番号 |
AOL1424 N-Channel MOSFET AOL1424 N-Channel Enhancement Mode Field Effect Transistor General Description The AOL1424 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltag Alpha & Omega Semiconductors |
文字列「 AOL1424 」「 1424 」で始まる検索結果です。 |
部品説明 |
2DB1424R PNP SURFACE MOUNT TRANSISTOR 2DB1424R PNP SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • Epitaxial Planar Die Construction • Complementary NPN Type Available (2DD2150) • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Lead Free B Diodes |
2PB1424 20V - 3A PNP low VCEsat transistor 2PB1424 20 V, 3 A PNP low VCEsat (BISS) transistor Rev. 01 — 2 May 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. NPN comple NXP Semiconductors |
2SB1424 Low Vce(sat) Transistor (-20V/ -3A) Transistors Low VCE(sat) Transistor (*20V, *3A) 2SB1424 / 2SA1585S FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *2A / *0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. FStructure Epitaxial planar type PNP silicon transis ROHM Semiconductor |
2SB1424 Epitaxial Planar PNP Transistors 2SB1424 Epitaxial Planar PNP Transistors P b Lead(Pb)-Free 1 1. BASE 2. COLLECTOR 3. EMITTER SOT-89 2 3 C) ABSOLUTE MAXIMUM RATINGS (Ta=25% Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Tempe Weitron Technology |
2SB1424 Plastic-Encapsulate Transistors Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulate Transistors 2SB1424 FEATURES Power dissipation PCM: 600 mW (Tamb=25℃) 2. COLLECTOR 3. EMITTER 1 2 3 TRANSISTOR (PNP) SOT-89 1. BASE Collector current -3 A ICM: Collector-base voltage -20 V V(BR)CBO: Operating and TRANSYS |
2SB1424 Transistor SMD Type Low VCE(sat) Transistor 2SB1424 Transistors Features Low VCE(sat). VCE(sat) = -0.2V (Typ.) (IC/IB = -2A / -0.1A) Excellent DC current gain characteristics. PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter volta Kexin |
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