|
|
Datasheet AO8810 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | AO8810 | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AO8810 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load swi |  Alpha & Omega Semiconductors | transistor |
AO8 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | AO8403 | P-Channel Enhancement Mode Field Effect Transistor
AO8403 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM appl Alpha & Omega Semiconductors transistor | | |
| 2 | AO8701 | P-Channel Enhancement Mode Field Effect Transistor
Rev 1: Oct 2004
AO8701, AO8701L ( Green Product ) P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
General Description
The AO8701 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is provided to facilitate t Alpha & Omega Semiconductors transistor | | |
| 3 | AO8701L | P-Channel Enhancement Mode Field Effect Transistor
Rev 1: Oct 2004
AO8701, AO8701L ( Green Product ) P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
General Description
The AO8701 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is provided to facilitate t Alpha & Omega Semiconductors transistor | | |
| 4 | AO8800 | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor July 2001
AO8800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is su  ALPHA transistor | | |
| 5 | AO8800 | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor AO8800
General Description
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
The AO8800 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable f  FreesCale transistor | | |
| 6 | AO8801 | Dual P-Channel Enhancement Mode Field Effect Transistor
AO8801 Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8801 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM Alpha & Omega Semiconductors transistor | | |
| 7 | AO8801 | Dual P-Channel Enhancement Mode Field Effect Transistor AO8801
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8801 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It i FreesCale transistor | |
| Esta página es del resultado de búsqueda del AO8810. Si pulsa el resultado de búsqueda de AO8810 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |