Datasheet AO8801A Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	AO8801A	20V P-Channel MOSFET AO8801A 20V P-Channel MOSFET General Description The AO8801A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Features VDS ID (at VGS=-10V) RDS(ON)	FreesCale

AO88 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
AO8810	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor AO8810 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable f	Alpha & Omega Semiconductors
AO8820	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor AO8820 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO8820 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(	Alpha & Omega Semiconductors
AO8814	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor AO8814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO8814 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(	Alpha & Omega Semiconductors

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Número de pieza	Descripción	Fabricantes	PDF
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