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Datasheet AO8800 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | AO8800 | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor July 2001
AO8800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is su |
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| 1 | AO8800 | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor AO8800
General Description
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
The AO8800 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable f |
 FreesCale |
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