AO6800 データシート PDFこの部品の機能は「Dual N-channel Enhancement Mode Field Effect Transistor」です。 |
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部品番号 |
AO6800 Dual N-Channel Enhancement Mode Field Effect Transistor July 2001 AO6800 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO6800 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation wit ETC |
文字列「 AO6800 」「 6800 」で始まる検索結果です。 |
部品説明 |
10CV6800AX CV-AX Series / Surface Mount Type Low Impedance at High Frequency Surface Mount Type Aluminum Electrolytic Capacitors w Items Rated voltage Operating temperature range Capacitance tolerance Tangent of loss angle tan MAX. 120Hz/20 m o Surface c Mount Type Low impedance . CV-AX Uat high frequency Series 4 t e e h S Specifications a at .D w w C Sanyo Electronic |
2512068007Y0 Chip Beads 42 14th Edition SM Beads Dimensions (Bold numbers are in millimeters, light numbers are nominal in inches.) Tape Width mm Pitch mm Part Number* Fig. A 2.85±0.2 .112 2.85±0.2 .112 2.85±0.2 .112 2.85±0.2 .112 2.85±0.2 .112 2.85±0.2 .112 2.70±0.2 .106 2.70±0.2 .106 1.5 Fair Rite |
2518068007Y0 Chip Beads 42 14th Edition SM Beads Dimensions (Bold numbers are in millimeters, light numbers are nominal in inches.) Tape Width mm Pitch mm Part Number* Fig. A 2.85±0.2 .112 2.85±0.2 .112 2.85±0.2 .112 2.85±0.2 .112 2.85±0.2 .112 2.85±0.2 .112 2.70±0.2 .106 2.70±0.2 .106 1.5 Fair Rite |
2518068007Y1 Chip Beads 42 14th Edition SM Beads Dimensions (Bold numbers are in millimeters, light numbers are nominal in inches.) Tape Width mm Pitch mm Part Number* Fig. A 2.85±0.2 .112 2.85±0.2 .112 2.85±0.2 .112 2.85±0.2 .112 2.85±0.2 .112 2.85±0.2 .112 2.70±0.2 .106 2.70±0.2 .106 1.5 Fair Rite |
2518068007Y6 Chip Beads 42 14th Edition SM Beads Dimensions (Bold numbers are in millimeters, light numbers are nominal in inches.) Tape Width mm Pitch mm Part Number* Fig. A 2.85±0.2 .112 2.85±0.2 .112 2.85±0.2 .112 2.85±0.2 .112 2.85±0.2 .112 2.85±0.2 .112 2.70±0.2 .106 2.70±0.2 .106 1.5 Fair Rite |
2N6800 N-CHANNEL POWER MOSFET LAB MECHANICAL DATA Dimensions in mm (inches) 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) SEME 2N6800 N–CHANNEL POWER MOSFET BVDSS ID RDS(on) 400V 3.0A 1.0W 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 Seme LAB |
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