Datasheet AO6605 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	AO6605	Complementary Enhancement Mode Field Effect Transistor AO6605 Complementary Enhancement Mode Field Effect Transistor General Description The AO6605 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Sta	Alpha & Omega Semiconductors

AO6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
AO6414	N-Channel Enhancement Mode Field Effect Transistor AO6414 N-Channel Enhancement Mode Field Effect Transistor General Description The AO6414 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It offers operation over a wide gate drive range from 2.5V to 12V. This device is suitable for use as a load	Alpha & Omega Semiconductors
AO6407	P-Channel Enhancement Mode Field Effect Transistor January 2003 AO6407 P-Channel Enhancement Mode Field Effect Transistor General Description The AO6407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch o	ETC
AO6704	N-Channel Enhancement Mode Field Effect Transistor AO6704 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO6704 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a b	Alpha & Omega Semiconductors

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Número de pieza	Descripción	Fabricantes	PDF
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