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Datasheet AO6604 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | AO6604 | 20V Complementary MOSFET AO6604
20V Complementary MOSFET
General Description
Product Summary
The AO6604 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
N-Channel VDS= 20V ID= 3.4A (VGS=4.5 | Alpha & Omega Semiconductors | mosfet |
2 | AO6604L | Complementary Enhancement Mode Field Effect Transistor Rev 2: Nov 2004
AO6604, AO6604L ( Green Product ) Complementary Enhancement Mode Field Effect Transistor
General Description
The AO6604 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, s | Alpha & Omega Semiconductors | transistor |
AO6 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | AO6400 | N-Channel MOSFET AO6400
30V N-Channel MOSFET
General Description
Product Summary
The AO6400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
VDS ID (at VGS=10V) R Alpha & Omega Semiconductors mosfet | | |
2 | AO6401 | P-Channel Enhancement Mode Field Effect Transistor AO6401 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Pr Alpha & Omega Semiconductors transistor | | |
3 | AO6401A | P-Channel Enhancement Mode Field Effect Transistor AO6401A P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6401A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM app Alpha & Omega Semiconductors transistor | | |
4 | AO6402 | N-Channel Enhancement Mode Field Effect Transistor Rev 3:Nov 2004
AO6402, AO6402L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6402 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device may be used as a load switch or in PWM applications. AO6402L ( Green Produ Alpha & Omega Semiconductors transistor | | |
5 | AO6402A | 30V N-Channel MOSFET AO6402A
30V N-Channel MOSFET
General Description
The AO6402A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which ma Alpha & Omega Semiconductors mosfet | | |
6 | AO6402L | N-Channel Enhancement Mode Field Effect Transistor Rev 3:Nov 2004
AO6402, AO6402L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6402 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device may be used as a load switch or in PWM applications. AO6402L ( Green Produ Alpha & Omega Semiconductors transistor | | |
7 | AO6403 | P-Channel Enhancement Mode Field Effect Transistor AO6403 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6403 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. It may be used in common-drain configuration Alpha & Omega Semiconductors transistor | |
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Número de pieza | Descripción | Fabricantes | |
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