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Datasheet AO3418 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | AO3418 | N-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) = 30V ID = 3.8 A RDS(ON) < 60mΩ (VGS = 10V) RDS(ON) < 70mΩ (VGS = 4.5V) RDS(ON) < 155mΩ (VGS = 2.5V)
AO3418, AO3418L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor
TO-236
(SOT-23)
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General Description
The AO3418 uses advanced trenc |
 KERSEMI |
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| 3 | AO3418 | 30V N-Channel MOSFET AO3418
30V N-Channel MOSFET
General Description
The AO3418 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
Product Summary
VDS ID (at VGS=10V) RDS |
 Alpha & Omega Semiconductors |
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| 2 | AO3418 | N-Channel 20-V (D-S) MOSFET Freescale
AO3418/MC3418
N-Channel 20-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits
PRODUCT SUMMARY rDS(on) (mΩ) |
 Freescale |
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| 1 | AO3418L | N-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) = 30V ID = 3.8 A RDS(ON) < 60mΩ (VGS = 10V) RDS(ON) < 70mΩ (VGS = 4.5V) RDS(ON) < 155mΩ (VGS = 2.5V)
AO3418, AO3418L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor
TO-236
(SOT-23)
Top
View
General Description
The AO3418 uses advanced trenc |
KERSEMI |
|
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