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Datasheet AO3400 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | AO3400 | N-Channel Enhancement Mode Field Effect Transistor Shenzhen Tuofeng Semiconductor Technology Co., Ltd
AO3400
AO3400 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable |
 Tuofeng Semiconductor |
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| 6 | AO3400 | N-CHANNEL MOSFET AO3400
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions SOT-23 塑封封装 N 道 MOS 场效应管。N- CHANNEL MOSFET in a SOT-23 Plastic Package.
特征 / Features
VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) < 28mΩ (VGS = 10V) RDS(ON) < 33mΩ (VGS = 4.5V) RDS(ON) < 52mΩ (VGS = 2.5V)
用� |
 BLUE ROCKET ELECTRONICS |
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| 5 | AO3400 | N-Channel Enhancement Mode Field Effect Transistor SMD Type
MOSFIECT
N-Channel Enhancement Mode Field Effect Transistor AO3400 (KO3400)
Features
VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) 28m (VGS = 10V) RDS(ON) 33m (VGS = 4.5V) RDS(ON) 52m (VGS = 2.5V)
+0.12.4 -0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
3
12 0.95 +0.1
-0.1
1.9 +0.1 -0.1
Absolut |
 Kexin |
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| 4 | AO3400 | N-Channel MOSFET Plastic-Encapsulate Mosfets
FEATURES
The AO3400 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited |
 HOTTECH |
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