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AN8882SB データシート PDF

この部品の機能は「Head Amplifier IC For Cd-rom Drive For 32 Times Speed Or More」です。


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部品番号
AN8882SB

Head amplifier IC for CD-ROM drive for 32 times speed or more


ICs for Compact Disc/CD-ROM Player AN8882SB Head amplifier IC for CD-ROM drive (for 32 times speed or more) s Overview The AN8882SB is a head amplifier IC for digital servo. It can configure an effic


Panasonic Semiconductor
Panasonic Semiconductor

データシート pdf



文字列「 AN8882 」「 8882SB 」で始まる検索結果です。

部品説明

AN8882

Head amplifier IC for CD-ROM drive for 32 times speed or more

ICs for Compact Disc/CD-ROM Player AN8882SB Head amplifier IC for CD-ROM drive (for 32 times speed or more) s Overview The AN8882SB is a head amplifier IC for digital servo. It can configure an efficient CD-ROM system in combination with the MN662754, and allows a full-automatic

Panasonic Semiconductor
Panasonic Semiconductor

 データシート pdf


AME8882

Low Dropout 2A CMOS Regulator

AME AME8882 Low Dropout 2A CMOS Regulator n General Description The AME8882A/B family of positive CMOS linear regulators provides ultra low-dropout voltage (240mV @2A) and low quiescent current (typically 600uA), thus making them ideal for power-saving system. These rugged devi

Analog Microelectronics
Analog Microelectronics

 データシート pdf


CXD8882Q

C-MOS FINE KEY PROCESSOR

********** C-MOS FINE KEY PROCESSOR -TOP VIEW80 70 60 51 CXD8882Q(1/3) IL08 GND V DD (+3V) 81 GND V DD (+3V) GND 50 90 GND GND V DD (+3V) 40 100 V DD (+3V) GND GND GND 31 1 10 20 30 (V DD =+3V) PIN I/O SIGNAL NO. I 1 KI3402 2 I KI3403 3 V DD GND 4 KI3404 5 I KI3

ETC
ETC

 データシート pdf


FDD8882

N-Channel PowerTrench MOSFET

FDD8882 / FDU8882 N-Channel PowerTrench® MOSFET November 2004 FDD8882 / FDU8882 N-Channel PowerTrench® MOSFET 30V, 55A, 11.5mΩ Features ! rDS(ON) = 11.5mΩ, VGS = 10V, ID = 35A ! rDS(ON) = 15mΩ, VGS = 4.5V, ID = 35A ! High performance trench technology for extremely low

Fairchild Semiconductor
Fairchild Semiconductor

 データシート pdf


FDMC8882

MOSFET ( Transistor )

FDMC8882 N-Channel Power Trench® MOSFET FDMC8882 N-Channel Power Trench® MOSFET 30 V, 16 A, 14.3 m: May 2014 Features General Description „ Max rDS(on) = 14.3 m: at VGS = 10 V, ID = 10.5 A „ Max rDS(on) = 22.5 m: at VGS = 4.5 V, ID = 8.3 A „ High performance technology

Fairchild Semiconductor
Fairchild Semiconductor

 データシート pdf


FDS8882

N-Channel MOSFET

FDS8882 N-Channel PowerTrench® MOSFET December 2008 FDS8882 N-Channel PowerTrench® MOSFET 30 V, 9 A, 20.0 mΩ Features General Description The FDS8882 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies

Fairchild Semiconductor
Fairchild Semiconductor

 データシート pdf

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