AN80M30RSP データシート PDFこの部品の機能は「5-pin/ Low Dropout Voltage Regulator With Standby Function (500 Ma Type)」です。 |
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部品番号 |
AN80M30RSP 5-pin/ low dropout voltage regulator with standby function (500 mA type) Voltage Regulators AN80MxxRSP Series 5-pin, low dropout voltage regulator with standby function (500 mA type) I Overview The AN80MxxRSP series is a 0.5 A, low dropout voltage regulator IC with standb Panasonic Semiconductor |
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部品説明 |
80303 I/O Processor Intel® 80303 I/O Processor Design Guide April 2002 Order Number: 273308-006 Information in this document is provided in connection with Intel® products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. E Intel |
AD8030 High Speed Rail-to-Rail Input / Output Amplifier Data Sheet Low Power, High Speed Rail-to-Rail Input/Output Amplifier AD8029/AD8030/AD8040 FEATURES Qualified for automotive applications Low power: 1.3 mA supply current/amplifier High speed 125 MHz, –3 dB bandwidth (G = +1) 60 V/µs slew rate 80 ns settling time to 0.1% Rail Analog Devices |
AGR18030EF Lateral MOSFET AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for global system for mobile communication (GSM), TriQuint Semiconductor |
AOZ8030 8-Line EMI Filter 8-Line EMI Filter with Integrated ESD Protection AOZ8030 General Description The AOZ8030 is an 8-line device integrating EMI filtering with ESD protection for each line. It is designed to suppress unwanted EMI/RFI signals and provide electrostatic discharge (ESD) protection in Alpha & Omega Semiconductors |
APT8030 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT8030B2VFR 800V 27A 0.300Ω POWER MOS V ® FREDFET T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also Advanced Power Technology |
APT8030B2VFR Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT8030B2VFR 800V 27A 0.300Ω POWER MOS V ® FREDFET T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also Advanced Power Technology |
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