A3141-U データシート PDFこの部品の機能は「Sensitive Hall-effect Switches For High-temperature Operation」です。 |
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部品番号 |
A3141-U SENSITIVE HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION 3141 THRU 3144 SENSITIVE HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION These Hall-effect switches are monolithic integrated circuits with tighter magnetic specifications, designed to operate co Allegro MicroSystems |
文字列「 A3141 」「 3141 」で始まる検索結果です。 |
部品説明 |
A3141 Sensitive Hall Effect Switches A3141, A3142, A3143, and A3144 Sensitive Hall Effect Switches for High-Temperature Operation Discontinued Product These parts are no longer in production The device should not be purchased for new design applications. Samples are no longer available. Date of status change: Octobe Allegro MicroSystems |
A3141-LT SENSITIVE HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION 3141 THRU 3144 SENSITIVE HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION These Hall-effect switches are monolithic integrated circuits with tighter magnetic specifications, designed to operate continuously over extended temperatures to +150°C, and are more stable with both Allegro MicroSystems |
A3141-UA SENSITIVE HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION 3141 THRU 3144 SENSITIVE HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION These Hall-effect switches are monolithic integrated circuits with tighter magnetic specifications, designed to operate continuously over extended temperatures to +150°C, and are more stable with both Allegro MicroSystems |
A3141ELT SENSITIVE HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION 3141 THRU 3144 SENSITIVE HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION These Hall-effect switches are monolithic integrated circuits with tighter magnetic specifications, designed to operate continuously over extended temperatures to +150°C, and are more stable with both Allegro MicroSystems |
2SK3141 Silicon N Channel MOS FET High Speed Power Switching 2SK3141 Silicon N Channel MOS FET High Speed Power Switching ADE-208-680B (Z) 3rd. Edition February 1999 Features • Low on-resistance R DS(on) = 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline TO–220AB D G 1 2 S 3 1. Gat Hitachi Semiconductor |
2SK3141 Silicon N-Channel MOS FET 2SK3141 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 4 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) 123 G REJ03G1070 Renesas |
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